PD移动电源和无线充MOS芯片提供 VS3640、VS3618

Firocksemi Post at 2018/5/8 17:07:00

PD移动电源和无线充MOS芯片提供   菲诺克科技   1360-0411-241   Q358-116-5900


 VS3640DE 

 30V/24A Dual N-Channel Advanced Power MOSFET 


Features 

 Dual N-Channel,5V Logic Level Control 
 Enhancement mode 
 Low on-resistance RDS(on) @ VGS=4.5 V 
 Fast Switching 
 100% Avalanche Tested 
 Pb-free lead plating; RoHS compliant 




 VS3622DE 

 30V/35A Dual N-Channel Advanced Power MOSFET 

Features 
 Dual N-Channel,5V Logic Level Control 
 Enhancement mode 
 Low on-resistance RDS(on) @ VGS=4.5 V 
 Fast Switching 
 100% Avalanche Tested 
 Pb-free lead plating; RoHS compliant 





VS3610AE

 30V/64A N-Channel Advanced Power MOSFET 

Features 
 N-Channel,5V Logic Level Control 

 Enhancement mode 

 Very low on-resistance RDS(on) @ VGS=4.5 V

 Fast Switching  100% Avalanche test 



VS3618AE

 30V/50A N-Channel Advanced Power MOSFET 

Features 
 N-Channel,5V Logic Level Control 
 Enhancement mode 
 Very low on-resistance RDS(on) @ VGS=4.5 V 
 Fast Switching 
 100% Avalanche test 
 Pb-free lead plating; RoHS compliant 




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